Pattern printability for off-axis incident light in EUV lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4688, Issue 1, 2002, Pages 277-288

  Sugawara, Minoru ^a   Ito, Masaaki ^a   Ogawa, Taro ^a   Hoshino, Eiichi ^a   Chiba, Akira ^a   Okazaki, Shinji ^a  

^a ASSOCIATION OF SUPER ADVANCED ELECTRONICS TECHNOLOGIES ASET   (Japan)

Author keywords

Aberration; MEF; Off axis incident light; OPC; OPE

Indexed keywords

ABERRATIONS; COHERENT LIGHT; ELECTROMAGNETIC WAVE DIFFRACTION; LIGHT ABSORPTION; ULTRAVIOLET RADIATION; VECTORS;

EXTREME ULTRAVIOLET LITHOGRAPHY (EUVL);

LITHOGRAPHY;

EID: 0036380155     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.472301     Document Type: Conference Paper

References (5)

1. Katsura Otaki, "Asymmetric of the aerial image in extreme ultraviolet lithography", Jpn.J.Appl.Phys., Vol 39 pp6819-6826, (2000)
2. Pei-yang Yan, Guojing Zhang, Andy Ma, and Ted Liang, "TAN EUVL mask fabrication and characterization",Proc. of SPIE vol. 4343, pp. 409-414, (2001)
3. T. Pistor, and A.R.Neureuther, "Calculating aerial images from EUV masks", Proc. of SPIE vol. 3676 pp. 679-696, 1999
4. T. Pistor, "Electromaginetic Simulation and Modeling with Applications in lithography", Thesis, 2001
5. C.G.Christof Krautschik, Massaki Ito, Iwao Nishiyama and Katsura Otaki, "The impact of the EUV mask phase response on the asymmetry ob bossung curves as predicted by rigorous EUV mask simulations", Proc. of SPIE vol. 4343, pp. 392-401, (2001)