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Volumn 5037 I, Issue , 2003, Pages 347-357

Asymmetry and thickness effects in reflective EUV masks

Author keywords

Antireflection layer; Extreme ultraviolet lithography; Image placement; Mask

Indexed keywords

ANTIREFLECTION COATINGS; COMPUTER SIMULATION; DIFFRACTION; FREQUENCY DOMAIN ANALYSIS; OPTICAL MULTILAYERS; PHOTOLITHOGRAPHY; SILICON WAFERS; THICKNESS MEASUREMENT;

EID: 0141501370     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.483602     Document Type: Conference Paper
Times cited : (16)

References (10)
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  • 2
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  • 4
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    • (2002) 22nd Annual BACUS Symposium on Photomask Technology , vol.4889 , pp. 382-388
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  • 5
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    • (2002) 22nd Annual BACUS Symposium on Photomask Technology , vol.4889 , pp. 1313-1323
    • Chen, F.1
  • 6
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  • 7
    • 0141458837 scopus 로고    scopus 로고
    • Pattern printability for off-axis incident light in EUV lithography
    • R. L. Engelstad; SPIE, Bellingham
    • M. Sugawara, M. Ito, T. Ogawa, E. Hoshino, A. Chiba, S. Okazaki, "Pattern Printability for Off-axis Incident Light in EUV Lithography," Emerging Lithographic Technologies VI, R. L. Engelstad, vol. 4668, 277-288, SPIE, Bellingham, 2002.
    • (2002) Emerging Lithographic Technologies VI , vol.4668 , pp. 277-288
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  • 8
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    • The impact of EUVL mask buffer and absorber material properties on mask quality and performance
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    • P-Y. Yan, "The Impact of EUVL Mask Buffer and Absorber Material Properties on Mask Quality and Performance," Emerging Lithographic Technologies VI, R. L. Engelstad, vol. 4668, 150-160, SPIE, Bellingham, 2002.
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  • 9
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.