Patterning capabilities of EUV resists

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5376, Issue PART 1, 2004, Pages 434-442

  Yueh, Wang ^a   Cao, Heidi ^a   Chandhok, Manish ^a   Lee, Sang ^a   Shumway, Michael ^b   Bokor, Jeff ^b  

^a INTEL CORPORATION   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Absorbance; Extreme ultraviolet (EUV) lithography; Line width roughness (LWR); Outgassing; Photoresist

Indexed keywords

EXTREME ULTRAVIOLET (EUV) LITHOGRAPHY; LINE WIDTH ROUGHNESS (LWR); MATERIAL TARGETS SPECS (MTS);

AGGLOMERATION; DEGASSING; MICROPROCESSOR CHIPS; PHOTOSENSITIVITY; QUENCHING; SOLVENTS; ULTRAVIOLET RADIATION;

PHOTORESISTS;

EID: 3843107875     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.536021     Document Type: Conference Paper

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36. Absorbance is calculated as: Abs = -log10 (T%/t) where T% is transparency and t is thickness (um).