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Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4345, Issue 1, 2001, Pages 385-395

Resist materials for 157 nm microlithography: An update

(15) Hung, Raymond J a Tran, Hoang V a Trinque, Brian C a Chiba, Takashi a Yamada, Shintaro a,f Sanders, Daniel P b Connor, Eric F b Grubbs, Robert H b Klopp, John c Frechet, Jean M J c Thomas, Brian H d Shafer, Gregory J d DesMarteau, Darryl D d Conley, Will e Grant Willson, C a

a UNIVERSITY OF TEXAS AT AUSTIN (United States)

b CALIFORNIA INSTITUTE OF TECHNOLOGY (United States)

c UNIVERSITY OF CALIFORNIA (United States)

d CLEMSON UNIVERSITY (United States)

e SEMATECH (United States)

f Shipley (United States)

Author keywords

157 nm lithography; 157 nm resist; 2 (trifluoromethyl)acrylates; Carbon monoxide copolymerization; Dissolution inhibitor; Fluoronorbornanes; Metal catalyzed addition polymerization

Indexed keywords

CARBOXYLIC ACIDS; CATALYSTS; COPOLYMERIZATION; DISSOLUTION; FLUOROCARBONS; FREE RADICAL POLYMERIZATION; MONOMERS; POLYSILANES; SYNTHESIS (CHEMICAL); TRANSPARENCY;

DISSOLUTION INHIBITORS;

PHOTORESISTS;

EID: 17944368287 PISSN: 0277786X EISSN: None Source Type: Journal
DOI: 10.1117/12.436870 Document Type: Article

Times cited : (72)

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