IBM-JSR 193nm negative tone resist: Polymer design, material properties, and lithographic performance

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5376, Issue PART 1, 2004, Pages 94-102

  Patel, Kaushal ^a   Lawson, Margaret ^a   Varanasi, Pushkara ^a   Medeiros, David ^a   Wallraff, Gregory ^a   Brock, Phillip ^a   DiPietro, Richard ^b   Nishimura, Yukio ^c   Chiba, Takashi ^c   Slezak, Mark ^d  

^a IBM   (United States)

^b IBM ALMADEN RESEARCH CENTER   (United States)

^c JSR CORPORATION   (Japan)

^d JSR Micro   (United States)

Author keywords

193nm lithography; Chemically amplified; Crosslinking; Etch; Hexafluoroalcohol; Negative tone resist

Indexed keywords

193NM LITHOGRAPHY; HEXAFLUOROALCOHOL; NEGATIVE TONE RESISTS; RETICLE ENHANCEMENT TECHNIQUES (RET);

COMPOSITION; CROSSLINKING; DISSOLUTION; ETCHING; FLUORINE CONTAINING POLYMERS; SEMICONDUCTOR DEVICE MANUFACTURE; SOLUBILITY;

PHOTORESISTS;

EID: 3843051218     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.536874     Document Type: Conference Paper

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