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Dipole decomposition mask design for full-chip implementation at 100nm technology node and beyond
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ASML MaskTools, Inc., Santa Clara, CA, USA. Proc.
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Dipole decomposition mask design for full-chip implementation at 100nm technology node and beyond Hsu, Stephen D.; Corcoran, Noel P.; Eurlings, Mark; Knose, William T.; Laidig, Thomas L.; Wampler, Kurt E.; Roy, Sabita; Shi, Xuelong; Hsu, Chungwei Michael; Chen, J. Fung; Finders, Jo; Socha, Robert John; Dusa, Mircea V. ASML MaskTools, Inc., Santa Clara, CA, USA. Proc. Vol. 4691 (Pt. 1, Optical Microlithography XV)
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Hsu, S.D.1
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0141722453
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65-nm full-chip implementation using double dipole lithography
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ASML MaskTools, Inc.; ASML MaskTools, Inc. (Netherlands); ASML MaskTools, Inc.
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65-nm full-chip implementation using double dipole lithography, S. D. Hsu, J. F. Chen, R. J. Socha, N. Cororan, W. T. Knose, T. L. Laidig, K. E. Wampler, X. Shi, C. M. Hsu, M. Eurlings, ASML MaskTools, Inc.; J. Finders, ASML MaskTools, Inc. (Netherlands); W. Conley, ASML MaskTools, Inc. Proceedings of SPIE-The International Society for Optical Engineering (2003), Optical Microlithography XVI
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Proceedings of SPIE-The International Society for Optical Engineering (2003), Optical Microlithography XVI
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Hsu, S.D.1
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High-resolution ultraviolet defect inspection of DAP (darkfield alternate phase) reticles
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IBM Microelectronics Div.; IBM Corp.; IBM Microelectronics Div.; KLA-Tencor Corp.; 19th Annual Symposium on Photomask Technology
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High-resolution ultraviolet defect inspection of DAP (darkfield alternate phase) reticles Liebmann, Lars W., Mansfield, Scott M., Wong, Alfred K., Smolinski, Jacek G., IBM Microelectronics Div.; Peng, Song, IBM Corp.; Kimmel, Kurt R., IBM Microelectronics Div.; Rudzinski, Maciej W., Wiley, James N., Zurbrick, Larry S., KLA-Tencor Corp. Proc. SPIE Vol. 3873, p. 148-161, 19th Annual Symposium on Photomask Technology
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Fundamental differences between positive- and negative-tone imaging
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FINLE Technologies; Optical/Laser Microlithography V
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Fundamental differences between positive- and negative-tone imaging Mack, Chris A., FINLE Technologies; Connors, James E., GCA Tropel Proc. SPIE Vol. 1674, p. 328-338, Optical/Laser Microlithography V
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Mack, C.A.1
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Optimum tone for various feature types: Positive versus negative
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IBM Microelectronics Div. Proc. SPIE
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Optimum tone for various feature types: positive versus negative Brunner, Timothy A., Fonseca, Carlos A., IBM Microelectronics Div. Proc. SPIE Vol. 4345, p. 30-36, Advances in Resist Technology and Processing XVIII
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Advances in Resist Technology and Processing XVIII
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Brunner, T.A.1
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Negative photoresist for 157 nm microlithography; A progress report
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International SEMATECH; Department of Chemistry and Chemical Engineering, UT Austin; Clariant Corporation; Advances in Resist Technology and Processing XIX
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Negative Photoresist for 157 nm Microlithography; A Progress Report. Conley, Will, Miller, Daniel and Zimmerman, Paul, International SEMATECH, Trinque, Brian C. and Wilson, C. Grant, Department of Chemistry and Chemical Engineering, UT Austin, Takanori, Kudo, Dammel, Ralph, Romano, Andrew, Clariant Corporation, Proc. SPIE Vol. 4690, p. 94-100, Advances in Resist Technology and Processing XIX.
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Conley, W.1
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