Novel negative photoresist based on polar alicyclic polymers for ArF excimer laser lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3333, Issue , 1998, Pages 417-424

  Iwasa, Shigeyuki ^a   Nakano, Kaichiro ^a   Maeda, Katsumi ^a   Hasegawa, Etsuo ^a  

^a NEC CORPORATION   (Japan)

Author keywords

193 nm lithography; Alicyclic polymer; Chemically amplified resist; Negative resist

Indexed keywords

EXCIMER LASERS; GAS LASERS; GROUP TECHNOLOGY; MICROMETERS; NEGATIVE RESISTANCE; PHOTORESISTORS; PHOTORESISTS; THICKNESS MEASUREMENT;

193-NM LITHOGRAPHY; ALICYCLIC POLYMER; ARF EXCIMER LASERS; CARBOXYL GROUPS; CHEMICALLY AMPLIFIED NEGATIVE RESISTS; CHEMICALLY AMPLIFIED RESIST; CROSS-LINKING REACTIONS; EXPOSURE SYSTEMS; HIGH THERMAL STABILITIES; HIGH TRANSPARENCIES; HYDROXYL GROUPS; METHOXYMETHYL; NEGATIVE PHOTORESISTS; NEGATIVE RESIST; RESIST POLYMERS; TETRAKIS;

POLYMERS;

EID: 0001684138     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.312460     Document Type: Conference Paper

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