A single-sided PHINES SONOS memory featuring high-speed and low-power applications

IEEE Electron Device Letters

Volumn 27, Issue 2, 2006, Pages 127-129

  Wu, Jau Yi ^a   Lee, Ming Hsiu ^a   Hsu, Tzu Hsuan ^a   Lung, Hsiang Lan ^a   Liu, Rich ^a   Lu, Chih Yuan ^a  

^a MACRONIX INTERNATIONAL CO LTD   (Taiwan)

Author keywords

Fowler Nordheim (FN) erase; Hat hole (HH) program; Nonvolatile flash memory (NFM); PHINES; SONOS

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRON TUNNELING; FABRICATION; NONVOLATILE STORAGE; THRESHOLD VOLTAGE;

FOWLER-NORDHEIM (FN) ERASE; HIGH PROGRAMMING SPEED; HOT-HOLE (HH) PROGRAM; LOW POWER CONSUMPTION; NONVOLATILE FLASH MEMORY; SINGLE-SIDED PHINES SONOS MEMORY;

FLASH MEMORY;

EID: 31544461253     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.863135     Document Type: Article

References (8)

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