A recombination model for transient and stationary stress-induced leakage current

Microelectronics Reliability

Volumn 40, Issue 4-5, 2000, Pages 703-706

  Ielmini, D ^a   Spinelli, A S ^b,c   Lacaita, A L ^a   Martinelli, A ^a   Ghidini, G ^d  

^a POLITECNICO DI MILANO   (Italy)

^b UNIVERSITY OF INSUBRIA   (Italy)

^c UNIVERSITY OF MILAN   (Italy)

^d STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; LEAKAGE CURRENTS; SEMICONDUCTING SILICON; STRESSES;

ELECTRON-HOLE RECOMBINATION; STRESS INDUCED LEAKAGE CURRENTS (SILC);

MOS DEVICES;

EID: 0033734098     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(99)00280-2     Document Type: Article

References (14)

1. Naruke K, Taguchi S, Wada M. IEDM Tech Dig 1988:424.
2. Baglee DA, Smayling MC. IEDM Tech Dig 1985:624.
3. Parker GH, Mead CA. Appl Phys Lett 1969;14:21.
4. Moazzami R, Hu C. IEDM Tech Dig 1992:139.
5. DiMaria DJ, Cartier E. J Appl Phys 1995;78:3883.
6. Blöchl PE, Stathis JH. Phys Rev Lett 1999;83:372.
7. Matsukawa N, Yamada S, Amemiya K, Hazama H. IEEE Trans Electron Devices 1996;43:1924.
8. Hemink GJ, Shimizu K, Aritome S, Shirota R. Proc IRPS 1996:117.
9. Meinertzhagen A, Petit C, Jourdain M, Mondon F, Gogenheim D. Microelectron Reliab 1999;39:191.
10. Bude JD, Weir BE, Silverman PJ. IEDM Tech Dig 1998;179.
11. Takagi S, Yasuda N, Toriumi A. IEEE Trans Electron Devices 1999;46:348.
12. Dumin DJ, Cooper JR, Maddux JR, Scott RS, Wong DP. J Appl Phys 1994;76:319.
13. Eitan B, Kolodny A. Appl Phys Lett 1983;43:106.
14. Spinelli AS, Lacaita AL, Rigamonti M, Ghidini G. IEEE Electron Device Lett 1999;20:106.