Carrier dynamics and electrostatic potential variation in InGaN quantum wells grown on {112̄2} GaN pyramidal planes

Applied Physics Letters

Volumn 89, Issue 23, 2006, Pages

  Srinivasan, S ^a   Stevens, M ^a   Ponce, F A ^a   Omiya, H ^b   Mukai, T ^b  

^a ARIZONA STATE UNIVERSITY   (United States)

^b NICHIA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALTERNATIVE SUBSTRATE ORIENTATIONS; CARRIER DYNAMICS; CRYSTAL GEOMETRIES; ELECTROSTATIC POTENTIAL VARIATION;

CATHODOLUMINESCENCE; CRYSTALLOGRAPHY; ELECTRON HOLOGRAPHY; LIGHT EMITTING DIODES; PIEZOELECTRICITY; POLARIZATION; SEMICONDUCTING INDIUM COMPOUNDS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33845450336     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2397566     Document Type: Article

References (11)

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