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Volumn 298, Issue SPEC. ISS, 2007, Pages 511-514
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InGaN multiple quantum wells grown on ELO GaN templates and the optical properties characterization
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Author keywords
A1. Multiple quantum wells; A1. Optical properties; A3. Epitaxial lateral overgrowth; B1. InGaN
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Indexed keywords
COMPOSITION;
GALLIUM NITRIDE;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
OPTICAL PROPERTIES;
SEMICONDUCTING INDIUM COMPOUNDS;
SEMICONDUCTOR GROWTH;
X RAY DIFFRACTION;
EPITAXIAL LATERAL OVERGROWTH;
HIGH RESOLUTION X-RAY DIFFRACTION (HR-XRD);
OPTICAL PROPERTIES CHARACTERIZATION;
PHOTOLUMINESCENCE SPECTRA;
SEMICONDUCTOR QUANTUM WELLS;
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EID: 33846417993
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2006.10.067 Document Type: Article |
Times cited : (6)
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References (15)
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