Comprehensive model of damage accumulation in silicon

Journal of Applied Physics

Volumn 103, Issue 1, 2008, Pages

  Mok, K R C ^a   Benistant, F ^a   Jaraiz, M ^b   Rubio, J E ^b   Castrillo, P ^b   Pinacho, R ^b   Srinivasan, M P ^c  

^a Chartered Semiconductor Manufacturing   (Singapore)

^b UNIVERSITY OF VALLADOLID   (Spain)

^c NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; COMPUTER SIMULATION; CRYSTALLINE MATERIALS;

DAMAGE ACCUMULATION; IMPLANTATION ANNEALING;

SILICON;

EID: 38149059785     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2829815     Document Type: Article

References (32)

1. E. Chason, S. T. Picraux, J. M. Poate, J. O. Borland, M. I. Current, T. Diaz de la Rubia, D. J. Eaglesham, O. W. Holland, M. E. Law, C. W. Magee, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.365193 81, 6513 (1997).
2. B. J. Pawlak, R. Surdeanu, B. Colombeau, A. J. Smith, N. E. B. Cowern, R. Lindsay, W. Vandervorst, B. Brijs, O. Richard, and R. Cristiano, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1682697 84, 2055 (2004).
3. R. D. Goldberg, J. S. Williams, and R. G. Elliman, Nucl. Instrum. Methods Phys. Res. B NIMBEU 0168-583X 10.1016/0168-583X(95)00711-3 106, 242 (1995).
4. T. Motooka and O. W. Holland, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.108017 61, 3005 (1992).
5. O. W. Holland, S. J. Pennycook, and G. L. Albert, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.102011 55, 2503 (1989).
6. T. Motooka and O. W. Holland, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.104871 58, 2360 (1991).
7. P. J. Schultz, C. Jagadish, M. C. Ridgway, R. G. Elliman, and J. S. Williams, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.44.9118 44, 9118 (1991).
8. R. D. Goldberg, R. G. Elliman, and J. S. Williams, Nucl. Instrum. Methods Phys. Res. B NIMBEU 0168-583X 80-81, 596 (1993).
9. L. Pelaz, L. A. Marques, and J. Barbolla, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1808484 96, 5947 (2004).
10. R. Karmouch, J. -F. Mercure, Y. Anahory, and F. Schiettekatte, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1852733 86, 031912 (2005).
11. M. J. Caturla, T. Diaz de la Rubia, L. A. Marques, and G. H. Gilmer, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.54.16683 54, 16683 (1996).
12. L. A. Marques, L. Pelaz, M. Aboy, L. Enriquez, and J. Barbolla, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.91.135504 91, 135504 (2003).
13. K. R. C. Mok, M. Jaraiz, I. Martin-Bragado, J. E. Rubio, P. Castrillo, R. Pinacho, J. Barbolla, and M. P. Srinivasan, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2014940 98, 046104 (2005).
14. M. Jaraiz, P. Castrillo, R. Pinacho, I. Martin-Bragado, and J. Barbolla, in Simulation of Semiconductor Processes and Devices 2001, edited by, D. Tsoukalas, and, C. Tsamis, (Wien, Austria, Springer, 2001), pp. 10-17.
15. G. Hobler and G. Otto, Mater. Sci. Semicond. Process. MSSPFQ 1369-8001 10.1016/S1369-8001(03)00065-9 6, 1 (2003).
16. F. F. Morehead, B. L. Crowder, and R. S. Title, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1661223 43, 1112 (1972).
17. K. A. Jackson, J. Mater. Res. 3, 1218 (1988). 0884-2914
18. L. A. Marques, J. E. Rubio, M. Jaraiz, L. A. Bailon, and J. Barbolla, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.363914 81, 1488 (1997).
19. E. C. Baranova, V. M. Gusev, Y. V. Martynenko, C. V. Starinin, and I. B. Haibullin, Radiat. Eff. RAEFBL 0033-7579 10.1016/0370-2693(73)90559-5 18, 21 (1973).
20. W. P. Maszara and G. A. Rozgonyi, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.337140 60, 2310 (1986).
21. R. Lindsay, B. Pawlak, J. Kittl, K. Henson, C. Torregiani, S. Giangrandi, R. Surdeanu, V. W. A. Mayur, J. Ross, in Material Research Society Proceedings (MRS, Pittsburgh, 2003), Vol. 765, p. D7.4.
22. I. Avci, M. E. Law, E. Kuryliw, and K. S. Jones, in IEDM Technical Digest (IEDM, Washington, DC, pp. 38.2.1-38.2.4, 2001).
23. F. Cristiano, N. Cherkashin, P. Calvo, Y. Lamrani, X. Hebras, A. Claverie, W. Lerch, and S. Paul, Mater. Sci. Eng., B 114-115, 174 (2004). 0921-5107
24. J. J. Hamilton, E. J. H. Collart, B. Colombeau, C. Jeynes, M. Bersani, D. Giubertoni, J. A. Sharp, N. E. B. Cowern, and K. J. Kirkby, Nucl. Instrum. Methods Phys. Res. B NIMBEU 0168-583X 10.1016/j.nimb.2005.04.112 237, 107 (2005).
25. R. Lindsay, R. Severi, B. J. Pawlak, K. Henson, A. Lauwers, X. Pages, A. Satta, R. Surdeanu, H. Lendzian, and K. Maex, in The Fourth International Workshop on Junction Technology (IEEE, New York, 2004), pp. 70-75.
26. B. J. Pawlak, R. Lindsay, R. Surdeanu, P. Stolk, K. Maex, and X. Pages, in Proceedings of the 14th International Conference on Ion Implantation Technology (IEEE, New York, 2002), pp. 21-24.
27. B. Colombeau, F. Cristiano, J. -C. Marrot, G. Ben Assayag, and A. Claverie, Mater. Res. Soc. Symp. Proc. MRSPDH 0272-9172 669, J481 (2001).
28. O. W. Holland, L. Xie, B. Nielsen, and D. S. Zhou, J. Electron. Mater. JECMA5 0361-5235 10.1007/BF02666181 25, 99 (1996).
29. O. W. Holland, M. K. El-Ghor, and C. W. White, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.99998 53, 1282 (1988).
30. O. W. Holland and C. W. White, Nucl. Instrum. Methods Phys. Res. B NIMBEU 0168-583X 10.1016/0168-583X(91)95238-9 59-60, 353 (1991).
31. J. E. Westmoreland, J. W. Mayer, F. H. Eisen, and B. Welch, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1653010 15, 308 (1969).
32. R. Karmouch, J. F. Mercure, Y. Anahory, and F. Schiettekatte, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1852733 86, 031912 (2005).