SCOPUS 정보 검색 플랫폼

Materials Research Society Symposium - Proceedings

Volumn 669, Issue , 2001, Pages

Effect of the Ge preamorphisation dose on the thermal evolution of End of Range defects

(5) Colombeau, B a Cristiano, F a Marrot, J C a Ben Assayag, G a Claverie, A a

a CEMES CNRS (France)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; COMPUTER SIMULATION; CRYSTAL DEFECTS; POSITIVE IONS; RAPID THERMAL ANNEALING; SEMICONDUCTING SILICON; SUPERSATURATION; TRANSMISSION ELECTRON MICROSCOPY;

DEFECT SIZE DISTRIBUTION; PREAMORPHIZATION;

SEMICONDUCTING GERMANIUM;

EID: 0035556689 PISSN: 02729172 EISSN: None Source Type: Conference Proceeding
DOI: 10.1557/proc-669-j4.8 Document Type: Conference Paper

Times cited : (2)

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