The use of ion implantation and annealing for the fabrication of strained silicon on thin SiGe virtual substrates

Materials Research Society Symposium Proceedings

Volumn 809, Issue , 2004, Pages 15-25

  Buca, D ^a   Morschbacher M J ^a   Hollander B ^a   Luysberg, M ^b   Loo, R ^c   Caymax, M ^c   Mantl, S ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b FZJ   (Germany)

^c IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; CONCENTRATION (PROCESS); DISLOCATIONS (CRYSTALS); ELECTRONIC PROPERTIES; MICROSTRUCTURE; MORPHOLOGY; NUCLEATION; RELAXATION PROCESSES; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING SILICON; SINGLE CRYSTALS; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY;

ION CHANNELLING; STRAIN RELAXATION; THERMAL ANNEALING; THREADING DISLOCATION;

ION IMPLANTATION;

EID: 12844257618     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-809-b1.6     Document Type: Conference Paper

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