Study of threading dislocations in wurtzite GaN films grown on sapphire by metalorganic chemical vapor deposition

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 37, Issue 3 A, 1998, Pages

  Hao, Maosheng ^a   Sugahara, Tomoya ^a   Sato, Hisao ^a   Morishima, Yoshiyuki ^a   Naoi, Yoshiki ^a   Romano, Linda T ^a   Sakai, Shiro ^a  

^a UNIVERSITY OF TOKUSHIMA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; CRYSTAL ORIENTATION; DISLOCATIONS (CRYSTALS); FILM GROWTH; GRAIN BOUNDARIES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM NITRIDE; THREADING DISLOCATIONS;

SEMICONDUCTING FILMS;

EID: 0032023301     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.l291     Document Type: Article

References (11)