Observation of minority-carrier traps in InGaN/GaN multiple-quantum-well light-emitting diodes during deep-level transient spectroscopy measurements

Applied Physics Letters

Volumn 88, Issue 18, 2006, Pages

  Kim, Jae Wook ^a   Song, G Hugh ^a   Lee, Jhang W ^b  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Kowon Technology Co Ltd   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; FERMI LEVEL; GALLIUM NITRIDE; PROBABILITY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

BARRIER LAYERS; DEEP-LEVEL TRANSIENT SPECTROSCOPY (DLTS); MINORITY-CARRIER TRAPS; MQW STRUCTURE;

LIGHT EMITTING DIODES;

EID: 33646529915     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2200392     Document Type: Article

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