Tradeoff characteristics between resistivity and reliability for scaled-down Cu-based interconnects

IEEE Transactions on Electron Devices

Volumn 55, Issue 1, 2008, Pages 350-357

  Yokogawa, Shinji ^a   Kikuta, Kuniko ^a   Tsuchiya, Hideaki ^a   Takewaki, Toshiyuki ^a   Suzuki, Mieko ^a   Toyoshima, Hinoroni ^a   Kakuhara, Yumi ^a   Kawahara, Naoyoshi ^a   Usami, Tatsuya ^a   Ohto, Koichi ^a   Fujii, Kunihiro ^a   Tsuchiya, Yasuaki ^a   Arita, Koji ^a   Motoyama, Koichi ^a   Tohara, Makoto ^a   Taiji, Toshiji ^a   Kurokawa, Tetsuya ^a   Sekine, Makoto ^a  

^a RENESAS TECHNOLOGY CORP   (Japan)

Author keywords

Cobalt tungsten phosphorous (CoWP); Copper alloy; Copper interconnect; Electromigration (EM); Plasma enhanced chemical vapor deposition (PECVD) self aligned barrier (PSAB); Reliability; Resistivity; Stress induced voiding (SIV)

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTROMIGRATION; INTERCONNECTION NETWORKS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RELIABILITY;

COPPER INTERCONNECT; STRESS-INDUCED VOIDING;

COPPER ALLOYS;

EID: 37749035052     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.910619     Document Type: Article

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