Effect of ammonia plasma pretreatment on silicon-nitride barriers for Cu metallization systems

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 5, 2001, Pages 1942-1947

  Qin, W ^a   Mo, Z Q ^a   Tang, L J ^a   Yu, B ^a   Wang, S R ^a   Xie, J ^a  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; ANNEALING; ATOMIC FORCE MICROSCOPY; CHEMICAL MECHANICAL POLISHING; COPPER; DIFFUSION; METALLIC FILMS; PLASMA APPLICATIONS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SECONDARY ION MASS SPECTROMETRY; SILICON NITRIDE; TRANSMISSION ELECTRON MICROSCOPY;

PLASMA PRETREATMENT;

METALLIZING;

EID: 0035440755     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1406155     Document Type: Article

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