메뉴 건너뛰기




Volumn 41, Issue 9-10, 2001, Pages 1409-1416

Invited paper: Electromigration performance of multi-level damascene copper interconnects

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; COPPER; CURRENT DENSITY; ELECTROMIGRATION; LITHOGRAPHY; PROCESS CONTROL; SCANNING ELECTRON MICROSCOPY;

EID: 0035456867     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(01)00162-7     Document Type: Article
Times cited : (54)

References (7)
  • 5
    • 0000034975 scopus 로고    scopus 로고
    • Electromigration path in cu thin-film lines
    • Hu, C.-K., R. Rosenberg, and K.Y. Lee, Electromigration path in Cu thin-film lines, Appl. Phys. Lett., 74 (1999) pp.2945-2947.
    • (1999) Appl. Phys. Lett. , vol.74 , pp. 2945-2947
    • Hu, C.-K.1    Rosenberg, R.2    Lee, K.Y.3
  • 7
    • 0000555230 scopus 로고    scopus 로고
    • Mechanisms for very long electromigration lifetime in dual-damascene cu interconnections
    • Hu, C.-K., L.Gignac, S.G. Malhotra, R. Rosenberg, and S. Boettcher, Mechanisms for very long electromigration lifetime in dual-damascene Cu interconnections, Appl. Phys. Lett., 78 (2001) pp.904-906.
    • (2001) Appl. Phys. Lett. , vol.78 , pp. 904-906
    • Hu, C.-K.1    Gignac, L.2    Malhotra, S.G.3    Rosenberg, R.4    Boettcher, S.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.