A novel CoWP cap integration for porous low-k/Cu interconnects with NH 3 plasma treatment and low-k top (LKT) dielectric structure

2006 International Interconnect Technology Conference, IITC

Volumn , Issue , 2006, Pages 152-154

  Kawahara, N ^a   Tagami, M ^b   Withers, B ^c   Kakuhura, Y ^a   Imura, H ^a   Ohto, K ^a   Taiji, T ^a   Arita, K ^a   Kurokawa, T ^a   Nagase, M ^a   Maruyama, T ^a   Oda, N ^a   Hayashi, Y ^b   Jacobs, J ^c   Sakurai, M ^c   Sekine, M ^a   Ueno, K ^a  

^a RENESAS TECHNOLOGY CORP   (Japan)

^b NEC CORPORATION   (Japan)

^c NEC Corporation of America   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COBALT COMPOUNDS; INTEGRATION; LEAKAGE CURRENTS;

DIELECTRIC RELIABILITY; INTEGRATION TECHNOLOGIES; INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE;

TECHNOLOGY;

EID: 50249131457     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2006.1648674     Document Type: Conference Paper

References (3)

1. T. Ishigami, T. Kurokawa, Y. Kakuhara, B. Withers, J. Jacobs, A. Kolics, I. Ivanov, M. Sekine and K. Ueno, Proc. IITC, (2005) p.75
2. C.-K. Hu, I., gignac, R. Rosenberg, E. Liniger, J. Rubino, C. Sambucctti, A. Stamper, A. Domenicucci, X. Chen, Microelectronic Eng. 70 (2003) 406
3. L. M. Michaelson, V. Mathew, M. Gall, M. Hauschildt, E. Acosta, S. Garcia, Proc. ADMETA2005 (2005) p. 30