Charge trapping and degradation of HfO2 SiO2 MOS gate stacks observed with enhanced cafm

IEEE Electron Device Letters

Volumn 27, Issue 3, 2006, Pages 157-159

  Aguilera, Lidia ^a   Porti, M ^a   Nafria M ^a   Aymerich, X ^a  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

Author keywords

Atomic force microscopy (AFM); Dielectric breakdown; HfO2; High dielectric; MOS device

Indexed keywords

ATOMIC FORCE MICROSCOPY; CALCIUM COMPOUNDS; DEGRADATION; HAFNIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS;

CHARGE TRAPPING; DIELECTRIC BREAKDOWN; ELECTRICAL PERFORMANCE; ELECTRICAL STRESS; GATE STACK; NATIVE DEFECTS;

MOS DEVICES;

EID: 33644635277     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.869799     Document Type: Article

References (11)

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