Electronic transport properties of thin, channel regions from SOI through GOI: A first-principles study

Thin Solid Films

Volumn 508, Issue 1-2, 2006, Pages 342-345

  Yamauchi, Jun ^a,b  

^a KEIO UNIVERSITY   (Japan)

^b INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

Density functional theory; GOI; SOI

Indexed keywords

ELECTRON MOBILITY; ELECTRONIC STRUCTURE; GERMANIUM; SILICON; SILICON ON INSULATOR TECHNOLOGY; TENSORS; THICKNESS CONTROL;

BRILLOUIN ZONE BOUNDARY; DENSITY FUNCTIONAL THEORY; ELECTRONIC TRANSPORT PROPERTIES; GERMANIUM ON INSULATOR; MASS APPROXIMATION THEORY;

THIN FILMS;

EID: 33646096752     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.06.115     Document Type: Article

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