Performance comparison and channel length scaling of strained Si FETs on SiGe-on-insulator (SGOI)

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2004, Pages 165-168

  Cai, J ^a   Rim, K ^a   Bryant, A ^a   Jenkins, K ^a   Ouyang, C ^a   Singh, D ^a   Ren, Z ^b   Lee, K ^a   Yin, H ^b   Hergenrother, J ^a   Kanarsky, T ^b   Kumar, A ^a   Wang, X ^b   Bedell, S ^a   Reznicek, A ^a   Hovel, H ^a   Sadana, D ^a   Uriarte, D ^b   Mitchell, R ^b   Ott, J ^a   Mocuta, D ^b   O'Neil, P ^b   Mocuta, A ^b   Leobandung, E ^b   Miller, R ^a   Haensch, W ^a   Ieong, M ^b   more..

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b Microelectronics Division   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN CURRENTS; SELF HEATING EFFECTS; STRAIN INDUCED ENHANCEMENT; UNIAXIAL STRESS; CHANNEL LENGTH; CURRENT DRIVES; LENGTH DEPENDENCE; LENGTH SCALING; PERFORMANCE COMPARISON; SCALING BEHAVIOURS; SIGE ON INSULATOR; STRAINED-SILICON; SUB-50 NM;

COMPUTER SIMULATION; HETEROJUNCTIONS; SEMICONDUCTING SILICON COMPOUNDS; SILICON ON INSULATOR TECHNOLOGY; STRAIN; STRESSES;

FIELD EFFECT TRANSISTORS; SILICON;

EID: 21644464217     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

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