Phonon-limited inversion layer electron mobility in extremely thin Si layer of silicon-on-insulator metal-oxide-semiconductor field-effect transistor

Journal of Applied Physics

Volumn 82, Issue 12, 1997, Pages 6096-6101

  Shoji, Masanari ^a,b   Horiguchi, Seiji ^a  

^a NTT Corporation and CREST of Japan Science and Technology   (Japan)

^b NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000323067     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366480     Document Type: Article

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