Migration-enhanced epitaxy of GaAs and AlGaAs

Japanese Journal of Applied Physics

Volumn 27, Issue 2R, 1988, Pages 169-179

  Horikoshi, Yoshiji ^a   Kawashima, Minoru ^a   Yamaguchi, Hiroshi ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Growth mechanism; Low temperature growth; Migration enhancement; Molecular beam epitaxy; RHEED observation

Indexed keywords

ELECTRONS - DIFFRACTION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS - GROWTH;

ALUMINUM GALLIUM ARSENIDE; GROWTH MECHANISMS; MIGRATION-ENHANCED EPITAXY; REFLECTION HIGH-ENERGY ELECTRON DIFFRACTION; SINGLE QUANTUM-WELL STRUCTURES; SURFACE MIGRATION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0023963635     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.27.169     Document Type: Article

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