Growth of cubic GaN by phosphorus-mediated molecular beam epitaxy

Applied Physics Letters

Volumn 74, Issue 21, 1999, Pages 3182-3184

  Zhao, Y ^a   Tu, C W ^a   Bae, I T ^b   Seong, T Y ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; CRYSTAL ORIENTATION; CRYSTALLIZATION; FILM GROWTH; MOLECULAR BEAM EPITAXY; NITRIDES; PHOSPHORUS; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES; THERMAL EFFECTS;

GALLIUM NITRIDE;

SEMICONDUCTING FILMS;

EID: 0032614643     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124100     Document Type: Article

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