Effect of NH3 flow rate on growth, structure and luminescence of amorphous silicon nitride films by electron cyclotron resonance plasma

Thin Solid Films

Volumn 516, Issue 6, 2008, Pages 1130-1136

  Xin, Y ^a,b   Shi, Y ^a   Liu, H ^a,c   Huang, Z X ^a   Pu, L ^a   Zhang, R ^a   Zheng, Y D ^a  

^a NANJING UNIVERSITY   (China)

^b SOOCHOW UNIVERSITY   (China)

^c SUZHOU UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

Amorphous silicon nitride; ECR plasma; Electroluminescence; Photoluminescence

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTROLUMINESCENCE; ELECTRON CYCLOTRON RESONANCE; METALLIC FILMS; OPTICAL EMISSION SPECTROSCOPY; PHOTOLUMINESCENCE; X RAY PHOTOELECTRON SPECTROSCOPY;

AMORPHOUS SILICON NITRIDE; FILM DEPOSITIONS; LIGHT WAVELENGTHS; STRUCTURAL TRANSITIONS;

SILICON NITRIDE;

EID: 37349039464     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.05.046     Document Type: Article

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