Getting high-efficiency photoluminescence from Si nanocrystals in SiO2 matrix

Applied Physics Letters

Volumn 81, Issue 22, 2002, Pages 4174-4176

  Wang, Y Q ^a   Kong, G L ^a   Chen, W D ^a   Diao, H W ^a   Chen, C Y ^a   Zhang, S B ^a   Liao, X B ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICA;

NANOCRYSTALS;

NANOSTRUCTURED MATERIALS;

EID: 0037175830     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1525395     Document Type: Article

References (22)

1. L.T. Canham, Appl. Phys. Lett. 57, 1046 (1990).
2. A.G. Cullis and L.T. Canham, Nature (London) 353, 335 (1991).
3. W.L. Wilson, P.F. Szajowski, and L.E. Brus, Science 262, 1242 (1993).
4. Z.H. Lu, D.J. Lockwood, and J.-M. Baribeau, Nature (London) 378, 258 (1995).
5. A.G. Cullis, L.T. Canham, and P.D.J. Calcott, J. Appl. Phys. 82, 909 (1997).
6. K.S. Min, K.V. Shcheglov, C.M. Yang, H.A. Atwater, M.L. Brongersma, and A. Polman, Appl. Phys. Lett. 69, 2033 (1996).
7. F. Iacona, G. Franzo, and C. Spinella, J. Appl. Phys. 87, 1295 (2000).
8. T. Inokuma, J. Appl. Phys. 83, 2228 (1998).
9. L. Tsybeskov, K.D. Hirschman, S.P. Duttagupta, M. Zacharias, P.M. Fauchet, J.P. McCaffrey, and D.J. Lockwood, Appl. Phys. Lett. 72, 43 (1998).
10. M. Zacharias, L. Tsybeskov, K.D. Hirschman, P.M. Fauchet, J. Blasing, P. Kohlert, and P. Veit, J. Non-Cryst. Solids 230, 1132 (1998).
11. L. Tsybeskov, K.D. Hirschman, S.P. Duttagupta, P.M. Fauchet, M. Zacharias, J.P. McCaffrey, and D.J. Lockwood, Phys. Status Solidi A 165, 69 (1998).
12. T.H. Maiman, R.H. Hoskins, I.J. Dhaenens, C.K. Asawa, and V. Evtuhov, Phys. Rev. B 123, 1151 (1961).
13. E. Strauss and W.J. Seelert, J. Lumin. 31&32, 191 (1984).
14. J.C. Vial, A. Bsiesy, F. Gaspard, R. Herino, M. Ligeon, F. Muller, and R. Romestain, Phys. Rev. B 45, 14171 (1992).
15. O. Bisi, S. Ossicini, and L. Pavesi, Surf. Sci. Rep. 38, 1 (2000).
16. M.V. Wolkin, J. Jorne, P.M. Fauchet, G. Allan, and C. Delerue, Phys. Rev. Lett. 82, 197 (1999).
17. L. Pavesi, L.D. Negro, C. Mazzoleni, G. Franzoj, and F. Priolo, Nature (London) 408, 440 (2000).
18. Y. Kanemitsu, T. Ogawa, K. Shiraishi, and K. Takeda, Phys. Rev. B 48, 4883 (1993).
19. G. Boureau, S. Camiato, and N. Capron, J. Appl. Phys. 89, 165 (2001).
20. M. Zacharias, J. Blsing, P. Veit, L. Tsybeskov, K. Hirschman, and P.M. Fauchet, Appl. Phys. Lett. 74, 2614 (1999).
21. H. Xia, Y.L. He, L.C. Wang, W. Zhang, X.N. Liu, X.K. Zhang, D. Feng, and H. Jackson, J. Appl. Phys. 78, 6705 (1995).
22. Y.Q. Wang, W.D. Chen, and X.B. Liao, Chin. Phys. (to be published).