Electron emission from individual indium arsenide semiconductor nanowires

Nano Letters

Volumn 7, Issue 2, 2007, Pages 536-540

  Heeres, Erwin C ^a   Bakkers, Erik P A M ^b   Roest, Aarnoud L ^b   Kaiser, Monja ^b   Oosterkamp, Tjerk H ^a   De Jonge, Niels ^b,c  

^a LEIDEN UNIVERSITY   (Netherlands)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

^c OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CURVES; ENERGY SPECTRUM; SEMICONDUCTOR ELECTRON SOURCES; SEMICONDUCTOR EMITTERS;

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON BEAMS; FERMI LEVEL; FIELD EMISSION; INDIUM ARSENIDE; NANOWIRES; TRANSMISSION ELECTRON MICROSCOPY;

ELECTRON EMISSION;

EID: 33847763328     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl062554r     Document Type: Article

References (32)

1. Yang, P. MRS Bull. 2005, 30, 85-91.
2. Xia, Y.; Yang, P.: Sun, Y.; Wu, Y.; Mayers, B.; Gates, B.; Yin, Y.; Kim, F.; Yan, H. Adv. Mater. 2003, 15, 353-389.
3. Lieber, C. M. MRS Bull. 2003, 28, 486-491.
4. De Franceschi, S.; van Dam, J. A.; Bakkers, E. P. A. M.; Feiner, L. F.; Gurevich, L.; Kouwenhoven, L. P. Appl. Phys. Lett. 2003, 83, 344-346.
5. Patolsky, F.; Zheng, G.; Lieber, C. M. Nanomedicine 2006, 1, 51-65.
6. Duan, X.; Huang, Y.; Cui, Y.; Wang, J.; Lieber, C. M. Nature 2001, 409, 66-69.
7. Doh, Y.-J.; van Dam, J. A.; Roest, A. L.; Bakkers, E. P. A. M.; Kouwenhoven, L. P.: De Franceschi, S. Science 2005, 309, 272-275.
8. Wildoer, J. W. G.; Harmans, C. J. P. M.; van Kempen, H. Phys. Reu. B 1997, 55, 16013-16016.
9. Sze, S. M. Physics of Semiconductor Devices; John Wiley & Sons: New York, 1981.
10. van Wees, B. Phys. World 1996, 9, 41-45.
11. Mohan, P.; Motohisa, J.; Fukui, T. Appl. Phys. Lett. 1996, 88, 13110.
12. Zhu, W.; Zhu, W. Vacuum Microelectronics; John Wiley & Sons: New York, 2002.
13. Good, R. H.; Mueller, E. W. Field Emission. In Handbuch der Physik, XXI, Fluegge, S., Ed.; Springer-Verlag: Berlin, 1956; Vol. 21, pp 176-231.
14. de Jonge, N.; Allioux, M.; Oostveen, J. T.; Teo, K. B. K.; Milne, W. I. Phys. Rev. Lett. 2005, 94, 186807-1-4.
15. de Jonge, N.; Bakkers, E. P. A. M.; Feiner, L. F.; Calvosa, A. M. Electron source with low energy spread. European Patent EP 1 641 012, 2005.
16. Morales, A. M.; Lieber, C. M. Science 1998, 279, 208-211.
17. Bakkers, E. P. A. M.; van Dam, J. A.; De Franceschi, S.; Kouwenhoven, L. P.; Kaiser, M,; Verheijen, M.; Wondergem, H.; Van der Sluis, P. Nat. Mater. 2004, 3, 769-773.
18. de Jonge, N.; Lamy, Y.; Kaiser, M. Nano Lett. 2003, 3, 1621-1624.
19. Hafner, J. H.; Cheung, C.-L.; Oosterkamp, T. H.; Lieber, C. M. J. Phys. Chem. B 2001, 105, 743-746.
20. Purcell, S. T.; Vincent, P.; Journet, C.; Binh, V. T. Phys. Rev. Lett. 2002, 88, 105502-1-4.
21. de Jonge, N.; Doytcheva, M.; Allioux, M.; Kaiser, M.; Mentink, S. A. M.; Teo, K. B. K.; Lacerda, R. G.; Milne, W. I. Adv. Mater. 2005, 17, 451-455.
22. Dean, K. A.; Chalamala, B. R. J. Vac. Sci. Technol., B 2003, 21, 868-871.
23. Charbonnier, F. Appl. Surf. Sci. 1996, 94-95, 26-43.
24. Swanson, L. W.; Schwind, G. A. A Review of the Zr/O Schottky Cathode. In Handbook of Charged Particle Optics; Orloff, J., Ed.; CRC Press: New York, 1997; pp 77-102.
25. Kalbitzer, S.; Knoblauch, A. Rev. Sci. Instrum. 1998, 69, 1026-1031.
26. Fowler, R. H.; Nordheim, L. W. Proc. R. Soc. London, Ser. A 1928, 119, 173-181.
27. Hawkes, P. W.; Kasper, E. Principles of Electron Optics; Academic Press: London, 1989.
28. Groening, O.; Kuettel, O. M.; Emmenegger, C.; Groening, P.; Schlapbach, L. J. Vac. Sci. Technol., B 2000, 18, 665-678.
29. Gobeli, G. W.; Allen, F. G. Phys. Rev. 1965, 137, A245-A254.
30. Truxillo, S. G.; Blair, J. C.; Einspruch, N. G.; Stratton, R. J. Chem. Phys. 1966, 44, 1724-1725.
31. Giesecke, G.; Pfister, H. Acta Cryslallogr. 1958, 11, 369-371.
32. Fursey, G. Appl. Surf. Sci. 1996, 94-95, 44-59.