TOTAL DOSE INDUCED HOLE TRAPPING AND INTERFACE STATE GENERATION IN BIPOLAR RECESSED FIELD OXIDES.

IEEE Transactions on Nuclear Science

Volumn NS-32, Issue 6, 1985, Pages

  Pease, R ^a   Emily, D ^a   Boesch Jr , H E ^a  

^a MISSION RESEARCH CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES, MOS; TRANSISTORS, FIELD EFFECT;

FIELD OXIDES; HOLE TRAPPING;

TRANSISTORS, BIPOLAR;

EID: 0022241790     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (11)