Deep centers in as-grown and electron-irradiated n-GaN

IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC

Volumn 2000-January, Issue , 2000, Pages 35-42

  Fang, Z Q ^a   Polenta, L ^a,b   Hemsky, J W ^a   Look, D C ^a  

^a WRIGHT STATE UNIVERSITY   (United States)

^b UNIVERSITY OF BOLOGNA   (Italy)

Author keywords

Capacitance voltage characteristics; Gallium nitride; Gold; MOCVD; Ohmic contacts; Optical devices; Optical materials; Sandwich structures; Schottky barriers; Spectroscopy

Indexed keywords

ACTIVATION ENERGY; CAPACITANCE; CONTACTS (FLUID MECHANICS); DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON IRRADIATION; GALLIUM NITRIDE; GOLD; INSULATING MATERIALS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OHMIC CONTACTS; OPTICAL DEVICES; OPTICAL MATERIALS; POINT DEFECTS; SANDWICH STRUCTURES; SAPPHIRE; SCHOTTKY BARRIER DIODES; SPECTROSCOPY;

A-CENTER; ACTIVATION ENERGY E; AS-GROWN; CAPACITANCE VOLTAGE CHARACTERISTIC; DEEP CENTERS; HIGH DISLOCATION DENSITY; LINE DEFECTS; SCHOTTKY BARRIERS;

DEFECTS;

EID: 84950121072     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SIM.2000.939193     Document Type: Conference Paper

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