Influence of different surface-passivation dielectrics on high-temperature strain relaxation of AlGaN in AlGaNGaN heterostructures

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 25, Issue 6, 2007, Pages 1896-1898

  Chen, D J ^a   Tao, Y Q ^a   Chen, C ^a   Xie, Z L ^a   Zhai, Z Y ^a   Wu, X S ^a   Han, P ^a   Zhang, R ^a   Zheng, Y D ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS; HIGH TEMPERATURE EFFECTS; PASSIVATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICA; STRAIN RELAXATION; X RAY DIFFRACTION;

LATTICE RELAXATION; SURFACE PASSIVATION;

DIELECTRIC MATERIALS;

EID: 37149051231     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2803728     Document Type: Article

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