Microstructure analysis of epitaxially grown self-assembled Ge islands on nanometer-scale patterned SiO2 Si substrates by high-resolution transmission electron microscopy

Journal of Applied Physics

Volumn 102, Issue 10, 2007, Pages

  Yoon, Tae Sik ^a   Kim, Hyun Mi ^b   Kim, Ki Bum ^b   Ryu, Du Yeol ^c   Russell, Thomas P ^d   Zhao, Zuoming ^e   Liu, Jian ^e   Xie, Ya Hong ^e  

^a Myong Ji University   (South Korea)

^b Seoul National University   (South Korea)

^c Yonsei University   (South Korea)

^d UNIVERSITY OF MASSACHUSETTS   (United States)

^e UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BLOCK COPOLYMERS; EPITAXIAL GROWTH; GERMANIUM; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MICROSTRUCTURE; SELF ASSEMBLED MONOLAYERS; SILICA;

DIAMETER; NUCLEATES; PATTERNED SUBSTRATES;

EPITAXIAL FILMS;

EID: 36749006182     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2812610     Document Type: Article

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