Selective growth of Ge islands on nanometer-scale patterned SiO 2/Si substrate by molecular beam epitaxy

Applied Physics Letters

Volumn 89, Issue 6, 2006, Pages

  Yoon, Tae Sik ^a   Zhao, Zuoming ^a   Liu, Jian ^a   Xie, Ya Hong ^a   Ryu, Du Yeol ^b   Russell, Thomas P ^b   Kim, Hyun Mi ^c   Kim, Ki Bum ^c  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b UNIVERSITY OF MASSACHUSETTS   (United States)

^c Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

GE ADATOMS; ISLANDS MORPHOLOGY; MULTIPLE ISLANDS MORPHOLOGY; SELECTIVE GROWTH;

BLOCK COPOLYMERS; COALESCENCE; MOLECULAR BEAM EPITAXY; RELAXATION PROCESSES; SELF ASSEMBLY; SILICA;

GERMANIUM;

EID: 33747135910     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2335976     Document Type: Article

References (17)

1. Y. H. Xie, S. B. Samavedam, M. Bulsara, T. A. Langdo, and E. A. Fitzgerald, Appl. Phys. Lett. 71, 3567 (1997).
2. O. G. Schmidt, N. Y. Jin-Phillipp, C. Lange, U. Denker, K. Eberl, R. Schreiner, H. Gräbeldinger, and H. Schweizer, Appl. Phys. Lett. 77, 4139 (2000).
3. B. Yang, F. Liu, and M. G. Lagally, Phys. Rev. Lett. 92, 025502 (2004).
4. R. R. Li, P. D. Dapkus, M. E. Thompson, W. G. Jeong, C. Harrison, P. M. Chaikin, R. A. Register, and D. H. Adamson, Appl. Phys. Lett. 76, 1689 (2000).
5. Z. Zhong and G. Bauer, Appl. Phys. Lett. 84, 1922 (2004).
6. E. S. Kim, N. Usami, and Y. Shiraki, Appl. Phys. Lett. 72, 1617 (1998).
7. L. Vescan, T. Stoica, B. Holländer, A. Nassiopoulou, A. Olzierski, I. Raptis, and E. Sutter, Appl. Phys. Lett. 82, 3517 (2003).
8. L. H. Nguyen, V. Le Thanh, D. Débarre, V. Yam, and D. Bouchier, Mater. Sci. Eng., B 101, 199 (2003).
9. S. Kiravittaya, H. Heidemeyer, and O. G. Schmidt, Physica E (Amsterdam) 23, 253 (2004).
10. Tae-Sik Yoon, Zuoming Zhao, Wen Feng, Biyun Li, Jian Liu, Ya-Hong Xie, Du Yeol Ryu, Thomas P. Russell, Hyun-Mi Kim, and Ki-Bum Kim, J. Cryst. Growth 290, 369 (2006).
11. D. Y. Ryu, K. Shin, E. Drokenmuller, C. J. Hawker, and T. P. Russell, Science 308, 236 (2005).
12. 2O= 1: 100) for 10 s. This procedure is repeated three times. The Si substrate is finally hydrogen terminated and introduced into the MBE chamber.
13. A. A. Shklyaev, M. Shibata, and M. Ichikawa, Phys. Rev. B 62, 1540 (2000).
14. C.-H. Tu, T.-C. Chang, P.-T. Liu, T.-H. Yang, H.-W. Zan, and C.-Y. Chang, Surf. Coat. Technol. 200, 3261 (2006).
15. H. J. Kim, Z. M. Zhao, J. Liu, V. Ozolins, J. Y. Chang, and Y. H. Xie, J. Appl. Phys. 95, 6065 (2004).
16. H. Gao and W. D. Nix. Annu. Rev. Mater. Sci. 29, 173 (1999).
17. B. J. Spencer, P. W. Voorhees, and J. Tersoff, Phys. Rev. B 64, 235318 (2000).