Growth behavior and microstructure of Ge self-assembled islands on nanometer-scale patterned Si substrate

Journal of Crystal Growth

Volumn 290, Issue 2, 2006, Pages 369-373

  Yoon, Tae Sik ^a   Zhao, Zuoming ^a   Feng, Wen ^a   Li, Biyun ^a   Liu, Jian ^a   Xie, Ya Hong ^a   Ryu, Du Yeol ^b   Russell, Thomas P ^b   Kim, Hyun Mi ^c   Kim, Ki Bum ^c  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b UNIVERSITY OF MASSACHUSETTS   (United States)

^c Seoul National University   (South Korea)

Author keywords

A1. Growth; A1. Microstructure; A1. Nanometer scale patterning; A3. Self assembled quantum dot; B1. Ge

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL GROWTH; EPITAXIAL GROWTH; GERMANIUM; MICROSTRUCTURE; SEMICONDUCTOR QUANTUM DOTS;

NANOMETER-SCALE PATTERNING; SELF-ASSEMBLED QUANTUM DOT; STRAIN RELAXATION;

SELF ASSEMBLY;

EID: 33646371263     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.02.004     Document Type: Article

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