Characterization of granular metal oxide semiconductor gas sensitive layers by using Hall effect based approaches

Journal of Physics D: Applied Physics

Volumn 40, Issue 23, 2007, Pages 7217-7237

  Oprea, A ^a   Barsan N ^a   Weimar, U ^a  

^a UNIVERSITY OF TÜBINGEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; CHEMICAL SENSORS; GRANULAR MATERIALS; HALL EFFECT; PARTIAL PRESSURE; POLYCRYSTALLINE MATERIALS; SOLID STATE REACTIONS;

DATA SOURCES; GAS SENSITIVE LAYERS; POROUS SEMICONDUCTORS; TARGET GASES;

MOS DEVICES;

EID: 36348940984     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/40/23/S05     Document Type: Article

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