Epitaxial SnO 2 thin films grown on (1̄012) sapphire by femtosecond pulsed laser deposition

Journal of Applied Physics

Volumn 91, Issue 3, 2002, Pages 1060-1065

  Dominguez, J E ^a   Pan, X Q ^a   Fu, L ^a   Van Rompay, P A ^a   Zhang, Z ^a   Nees, J A ^a   Pronko, P P ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BACKGROUND PRESSURE; BULK SINGLE CRYSTALS; CONDUCTION ELECTRONS; DEPOSITION CHAMBERS; ELECTROSTATIC ENERGIES; FEMTOSECOND PULSED-LASER DEPOSITION; FILM SURFACES; HALL EFFECT MEASUREMENT; HIGH QUALITY; LASER INDUCED PLASMA; PLASMA PLUMES; RUTILE STRUCTURE; SAPPHIRE SUBSTRATES; SINGLE-CRYSTALLINE; SMOOTH SURFACE; TI-SAPPHIRE; ULTRA-FAST;

CRYSTAL DEFECTS; DEPOSITION; ELECTRON MOBILITY; EMISSION SPECTROSCOPY; ENERGY MANAGEMENT; EPITAXIAL FILMS; EPITAXIAL GROWTH; LASER PRODUCED PLASMAS; OXIDE MINERALS; OXYGEN; PULSED LASER DEPOSITION; SAPPHIRE; VAPOR DEPOSITION;

INTERFACES (MATERIALS);

EID: 0036470763     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1426245     Document Type: Article

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