Grain-boundary-limited transport in semiconducting SnO2 thin films: Model and experiments

Journal of Applied Physics

Volumn 83, Issue 2, 1998, Pages 888-893

  Prins, M W J ^a   Grosse Holz, K O ^a   Cillessen, J F M ^a   Feiner, L F ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000989210     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366773     Document Type: Article

References (22)

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14. f =70(30) meV.
15. 2/Vs) we find / =4.4 nm.
16. -3. we find a depletion width of about, 20 nm. The intergrain barrier consists of two back-to-back. Schottky barriers, such that the total width of the depleted region is about 40 nm.
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19. BT is larger than 3 meV.
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21. BT/e. which at 100 K. equals a few hundred volts, nearly two orders of magnitude larger than the voltages we apply.
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