Effect of ion bombardment and annealing on the electrical properties of hydrogenated amorphous silicon metal-semiconductor-metal structures

Journal of Applied Physics

Volumn 97, Issue 2, 2005, Pages

  Orwa, J O ^a   Shannon, J M ^a   Gateru, R G ^a   Silva, S R P ^a  

^a UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE DEFECTS; COULOMBIC BARRIER HEIGHT; HOPPING CONDUCTIVITY; POOLE-FRENKEL PLOTS;

ACTIVATION ENERGY; ANNEALING; GLASS; HYDROGENATION; ION BOMBARDMENT; SEMICONDUCTOR METAL BOUNDARIES; SUBSTRATES; THIN FILMS;

AMORPHOUS SILICON;

EID: 19944433710     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1834710     Document Type: Article

References (15)

1. S. R. Ovshinsky, Phys. Rev. Lett. 21, 1450 (1968).
2. J. F. Gibbons and W. E. Beadle, Solid-State Electron. 7, 785 (1964).
3. C. Feldman and K. Moorjani, Thin Solid Films 5, R1 (1970).
4. M. C. Gabriel and D. Adler, J. Non-Cryst. Solids 48, 297 (1982).
5. J. M. Shannon and S. P. Lau, Electron. Lett. 35, 1976 (1999).
6. R. G. Gateru, J. M. Shannon, and S. R. P. Silva, Mater. Res. Soc. Symp. Proc. 742, k.2.3 (2003).
7. J. Hu, A. J. Snell, J. Hajto, and A. E. Owen, Philos. Mag. B 80, 29 (2000).
8. J. M. Shannon and C. H. Chua, Solid-State Electron. 47, 1903 (2003).
9. M. K. Chai, J. M. Shannon, and B. J. Sealy, Electron. Lett. 34, 919 (1998).
10. R. A. C. M. M. van Swaaij, A. D. Annis, B. J. Sealy, and J. M. Shannon, J. Appl. Phys. 82, 4800 (1997).
11. A. K. Johscher, J. Electrochem. Soc. 116, 217C (1969).
12. S. P. Lau, J. M. Shannon, and B. J. Sealy, J. Non-Cryst. Solids 227-230, 533 (1998).
13. J. M. Shannon and A. D. Annis, Philos. Mag. Lett. 72, 323 (1995).
14. S. C. Deane and M. J. Powell, Phys. Rev. B 48, 10815 (1993).
15. M. J. Powell and S. C. Deane, Phys. Rev. B 53, 10121 (1996).