Electron tunneling through a double barrier a reverse-biased metal-oxide-silicon structure

Semiconductors

Volumn 36, Issue 8, 2002, Pages 889-894

  Kareva, G G ^a   Vexler, M I ^b   Grekhov, I V ^b   Shulekin, A F ^b  

^a ST PETERSBURG STATE UNIVERSITY   (Russian Federation)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0036701114     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1500466     Document Type: Article

References (6)

1. G.G. Kareva, Fiz. Tekh. Poluprovodn. (St. Petersburg) 33, 969 (1999) [Semiconductors 33, 883 (1999)].
2. H.S. Momose, M. Ono, T. Yoshitomi, et al., IEEE Trans. Electron Devices 43, 1233 (1996).
3. S. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981; Mir, Moscow, 1984), Vol. 1, Chap. 7.
4. J. Pozela, Physics of High-Speed Transistors (Mokslas, Vilnius, 1989; Plenum, New York, 1989).
5. K. Brennan, J. Appl. Phys. 62, 2392 (1987).
6. A.F. Shulekin, M.I. Vexler, and H. Zimmermann, Semicond. Sci. Technol. 14, 470 (1999).