Tunnel charge transport within silicon in reversely-biased MOS tunnel structures

Microelectronics Journal

Volumn 37, Issue 2, 2006, Pages 114-120

  Vexler, M I ^a   El Hdiy, A ^b   Grgec, D ^c   Tyaginov, S E ^a   Khlil, R ^b   Meinerzhagen, B ^c   Shulekin, A F ^a   Grekhov, I V ^a  

^a IOFFE INSTITUTE   (Russian Federation)

^b UNIVERSITÉ DE REIMS CHAMPAGNE ARDENNE   (France)

^c TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRIC CURRENTS; ELECTRON TUNNELING; ELECTRONS; SEMICONDUCTOR MATERIALS; SILICON;

BAND DIAGRAMS; CARRIER TRANSPORT; MOS TUNNELS; TUNNEL CHARGE TRANSPORT;

MOS DEVICES;

EID: 28644438698     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2005.04.048     Document Type: Article

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