Novel approach to charge-based non-quasi-static model of the MOS transistor valid in all modes of operation

Solid-State Electronics

Volumn 44, Issue 6, 2000, Pages 887-894

  Sallese, J M ^a   Porret, A S ^a  

^a EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; COMPUTER SIMULATION; SEMICONDUCTOR DEVICE MODELS;

TRANSADMITTANCE;

MOSFET DEVICES;

EID: 0033727761     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(00)00040-X     Document Type: Article

References (19)

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