An explicit quasi-static charge-based compact model for symmetric DG MOSFET

2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings

Volumn 3, Issue , 2006, Pages 686-691

  Pregaldiny F ^a   Krummenacher, F ^b   Sallese, J M ^b   Diagne, B ^a   Lallement, C ^a  

^a UMR 7005   (France)

^b EPFL   (Switzerland)

Author keywords

Compact model; Double gate MOSFET; EKV; Transcapacitance; VHDL AMS

Indexed keywords

COMPUTER SIMULATION; DOPING (ADDITIVES); ELECTRIC CHARGE; GATES (TRANSISTOR); INTEGRATED CIRCUIT LAYOUT; MATHEMATICAL MODELS;

CIRCUIT DESIGN; DOUBLE-GATE (DG) MOSFET; MOBILE CHARGE DENSITY; TRANSCAPACITANCE;

MOSFET DEVICES;

EID: 33845218490     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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