Preparation and characterization of GaN films grown on Ga-diffused Si(111) substrates

Rare Metals

Volumn 24, Issue 2, 2005, Pages 194-199

  Sun, Zhencui ^a   Cao, Wentian ^b   Wei, Qinqin ^c   Wang, Shuyun ^b   Xue, Chengshan ^b   Sun, Haibo ^a  

^a SHANDONG JIAOTONG UNIVERSITY   (China)

^b SHANDONG NORMAL UNIVERSITY   (China)

^c SHANDONG UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

Ga diffused Si(111) substrates; Ga2O3 films; GaN films; Materials synthesis; Radio frequency (r.f.) magnetron sputtering

Indexed keywords

CRYSTAL STRUCTURE; FILM GROWTH; MAGNETRON SPUTTERING; MORPHOLOGY; NITRIDING; POLYCRYSTALS; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTRATES;

GALLIUM DIFFUSED SI(111) SUBSTRATES; GALLIUM NITRIDE FILMS; HEXAGONAL WURTZITE STRUCTURE; RADIO FREQUENCY MAGNETRON SPUTTERING; STRUCTURAL PROPERTIES;

GALLIUM NITRIDE;

EID: 22844446412     PISSN: 10010521     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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