A simple spacer technique to fabricate Poly-Si TFTs with 50-nm nanowire channels

IEEE Electron Device Letters

Volumn 28, Issue 11, 2007, Pages 993-995

  Chang, Chia Wen ^a   Deng, Chih Kang ^a   Chang, Hong Ren ^a   Chang, Che Lun ^a   Lei, Tan Fu ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Nanowire (NW); Polycrystalline silicon (poly Si); Sidewall spacer; Thin film transistors (TFTs); Trigatelike structure

Indexed keywords

ELECTRODES; GATES (TRANSISTOR); NANOWIRES; POLYSILICON;

POLYGATE ELECTRODE; SIDEWALL SPACER-FORMATION TECHNIQUE; TRIGATELIKE STRUCTURE;

THIN FILM TRANSISTORS;

EID: 36148986139     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.906808     Document Type: Article

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