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Volumn 46, Issue 8, 1999, Pages 1693-1698
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Effect of LDD structure and channel poly-Si thinning on a gate-all-around TFT (GAT) for SRAM's
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Author keywords
[No Author keywords available]
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Indexed keywords
CHEMICAL VAPOR DEPOSITION;
ELECTRIC FIELDS;
ELECTRODES;
LEAKAGE CURRENTS;
SCANNING ELECTRON MICROSCOPY;
SEMICONDUCTING SILICON COMPOUNDS;
SEMICONDUCTOR DEVICE STRUCTURES;
SEMICONDUCTOR STORAGE;
THRESHOLD VOLTAGE;
GATE ALL AROUND THIN FILM TRANSISTORS;
LIGHTLY DOPED DRAIN;
PERFORMANCE VARIATIONS;
SINGLE GATE THIN FILM TRANSISTORS;
THIN FILM TRANSISTORS;
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EID: 0033169527
PISSN: 00189383
EISSN: None
Source Type: Journal
DOI: 10.1109/16.777158 Document Type: Article |
Times cited : (13)
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References (6)
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