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Volumn 46, Issue 8, 1999, Pages 1693-1698

Effect of LDD structure and channel poly-Si thinning on a gate-all-around TFT (GAT) for SRAM's

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC FIELDS; ELECTRODES; LEAKAGE CURRENTS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR STORAGE; THRESHOLD VOLTAGE;

EID: 0033169527     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.777158     Document Type: Article
Times cited : (13)

References (6)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.