A new dopant activation technique for poly-Si TFTs with a self-aligned gate-overlapped LDD structure

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2000, Pages 205-207

  Ohgata, Kohji ^a   Mishima, Yasuyoshi ^a   Sasaki, Nobuo ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC POTENTIAL; EXCIMER LASERS; GATES (TRANSISTOR); GLASS; LOW TEMPERATURE EFFECTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYSILICON; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DOPING; SUBSTRATES; THERMAL EFFECTS;

EXCIMER LASER ANNEALING (ELA);

THIN FILM TRANSISTORS;

EID: 0034452606     PISSN: 01631918     EISSN: None     Source Type: Journal    
DOI: 10.1109/IEDM.2000.904293     Document Type: Article

References (7)