Effects of channel width on electrical characteristics of polysilicon TFTs with multiple nanowire channels

IEEE Transactions on Electron Devices

Volumn 52, Issue 10, 2005, Pages 2343-2346

  Wu, Yung Chun ^b   Chang, Ting Chang ^c   Liu, Po Tsun ^b   Chen, Chi Shen ^b   Tu, Chun Hao ^b   Zan, Hsiao Wen ^b   Tai, Ya Hsiang ^b   Chang, Chun Yen ^a,b  

^a IEEE

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

Author keywords

Lightly doped drain (LDD); Nanowire; Polysilicon; Thin film transistor (TFT)

Indexed keywords

CHANNEL CAPACITY; GATES (TRANSISTOR); NANOWIRES; POLYSILICON;

LIGHTLY DOPED DRAIN (LDD); NANOWIRE CHANNELS;

THIN FILM TRANSISTORS;

EID: 33947375692     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.856797     Document Type: Article

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