Triple-gate metal-oxide-semiconductor field effect transistors fabricated with interference lithography

Nanotechnology

Volumn 15, Issue 4, 2004, Pages

  Lemme, M C ^a   Moormann, C ^a   Lerch, H ^a   Moller M ^a   Vratzov, B ^a   Kurz, H ^a  

^a AMO GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIREFLECTION COATINGS; CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; FIELD EFFECT TRANSISTORS; INDUCTIVELY COUPLED PLASMA; ION IMPLANTATION; LITHOGRAPHY; MOSFET DEVICES; OXIDATION; RAPID THERMAL ANNEALING; REACTIVE ION ETCHING; SWITCHING;

INTERFERENCE LITHOGRAPHY; LASER INTERFERENCE LITHOGRAPHY (LIL); NANOELECTRONICS; TRANSISTOR DRIVE CURRENTS;

SEMICONDUCTOR MATERIALS;

EID: 2342652355     PISSN: 09574484     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-4484/15/4/016     Document Type: Conference Paper

References (8)

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