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Volumn 273-274, Issue , 1999, Pages 251-255

Breaking through the electrical saturation barrier: 2D- versus 3D-doping in n-type silicon

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON MICROSCOPY; POINT DEFECTS; SEMICONDUCTOR DOPING; X RAY SPECTROSCOPY;

ELECTRICAL SATURATION BARRIERS;

SEMICONDUCTING SILICON;

EID: 0033322170 PISSN: 09214526 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-4526(99)00465-2 Document Type: Article

Times cited : (5)

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